FGT think your best choice in the future
System Integration Designers in FGT
- Highly Accuracy at Low Flow
- Fast Response(≦1.0)
- Wide Pressure Range Available(1300 PSIG)
- No Leakage
- No Temperature or Pressure Required
- Connection compatible
- High stable removable sensor
- Corrosion resistance Value
- Excellent Linearity
- Excellent long term Stability
- Modular design
- Compact Flow Control System
- 提供寬壓力範圍（1300 PSIG）
IOT, MCU, PLC
What is MFC
A mass flow controller (MFC) is a device used to measure and control the flow of gases. A mass flow controller is designed and calibrated to control a specific type of liquid or gas at a particular range of flow rates. The MFC can be given a setpoint from 0 to 100% of its full scale range but is typically operated in the 10 to 90% of full scale where the best accuracy is achieved. The device will then control the rate of flow to the given setpoint. MFCs can be either analog or digital. A digital flow controller is usually able to control more than one type of fluid whereas an analog controller is limited to the fluid for which it was calibrated.
All mass flow controllers have an inlet port, an outlet port, a mass flow sensor and a proportional control valve. The MFC is fitted with a closed loop control system which is given an input signal by the operator (or an external circuit/computer) that it compares to the value from the mass flow sensor and adjusts the proportional valve accordingly to achieve the required flow. The flow rate is specified as a percentage of its calibrated full scale flow and is supplied to the MFC as a voltage signal.
Mass flow controllers require the supply gas or liquid to be within a specific pressure range. Low pressure will starve the MFC of fluid and cause it to fail to achieve its setpoint. High pressure may cause erratic flow rates.
What is CVD
hemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon (dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-k dielectrics.
2.Valve manifold box/panel (VMB/VMP)
What is VMB/VMP
Through our experiences of handling gases, we have acquired the knowledge to design and manufacture gas panel (gas box) of EPI system and MOCVD, material supply system etc.
Achievements in our business, we are able to design and manufacture to meet customer’s request (price and specification). We can handle the hub ring air supply of liquefied gases not just only normal gases. We also support with var-ous kind of legal application.
|Response Time||≦1.0 sec|
|Accuracy||±1.0 % FS|
|Repeatabllity||±0.25 % FS|
|Proof Pressure||1300 PSIG|
|Leak rate||1 x 10-9 atm.cc/sec or less|
|Working temperature Range||0~50℃|
|Materials of parts in contact w/gases||Body:SUS316|
|Valve seat:Vition™(Option Bura™ or Kalrez™ or Teflon™)|
|Option: 1/8 compression,1/4 VCR™,3/8 Compression,VCR™|
|Electrical connections||Dsub 15-pin male connector per standards|
|Flow rate input signals||0~5 Vdc||4~20mA||0~5 Vdc||4~20mA|
|Flow rate output signals||0~5 Vdc||4~20mA||0~5 Vdc||4~20mA|
|required power supply||＋15~28 Vdc/350mA|
|F||FGT Logo(Standard Type)|
|TMFC||Complete Ordering Code|
|＊Note:All Model come with Power Supply(＋15~28 Vdc/350mA)|
|＊Note:Using customer Logo launch to more than 100 united for one year|